Guofeng Yang

Gen：Male

 Birth：1985.6

Title：Associate Professor

Tel：18115396518

E-mail：gfyang@jiangnan.edu.cn

【Academic Introduction】 

Ph.D., Associate Professor, Master's Supervisor in the department of Optoelectronic information Science and Technology of Jiangnan University. Member of the Optical Society of America and the Optical Society of China.Research interests including III-nitride semiconductor materials and optoelectronic devices, and two-dimensional semiconductor materials. Prof. Yang has published over 60 SCI papers and been supported by several findings such as the National Natural Science Foundation of China, the National Natural Science Foundation of Special Theoretical Physics, the Natural Science Foundation of Jiangsu Province and the Fundamental Research Funds for the Central Universities.

【Jobs and Research Experiences】

2013.06-Now，Jiangnan University, Department of Optoelectronic Information Science and Engineering, School of Science, Associate Professor.

【Research Area】

Growth of III-nitride and two-dimensional semiconductor materials, Theoretical simulation and fabrication of III-nitride semiconductor optoelectronics and electronic devices, Design of semiconductor photodector and sensor systems.

【Main Publication List】

[1] Jin Wang, Yang Guofeng*, Rui Sun, et al., A study on the electronic and interfacial structures of monolayer ReS2-metal contacts, Phys. Chem. Chem. Phys., 2017, 19, 27052-27052.

[2] Chujun Yao, Yang Guofeng*, Rui Sun, et al., High-performance AlGaN-based solar-blind avalanche photodiodes with dual-periodic III-nitride distributed Bragg reflectors, Applied Physics Express, 2017, 10, 034302.

[3] Yang Guofeng*, Qing Zhang, Jin Wang, et al., InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes, Review in Physics, 2016, 1, 101-119.

[4] Yang Guofeng*, Chen Peng, Shumei Gao, et al., White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy, Photonics Research, 2016, 4, 17-20.

[5] Yang Guofeng*, Qing Zhang, Jin Wang, et al., Analysis of 270/290/330-nm AlGaN-based deep ultraviolet light-emitting diodes with different Al content in quantum wells and barriers, IEEE Photonics Journal, 2015, 7, 2200707.

[6] Yan Dawei, Ren Jian, Yang Guofeng, et al., Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs, IEEE Electron Device Letters, 2015, 36, 1281-1283.

[7] Yang Guofeng*, Xie Feng, Chen Peng, et al., Formation of nanorod InGaN/GaN multiple quantum wells using nikel nano-masks and dry etching for InGaN-based light-emitting diodes, Material Science in Semiconductor Processing, 2015, 30, 694-706.

[8] Wu Zhenlong, Chen Peng, Yang Guofeng*, et al., Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy, Applied Surface Science, 2015, 331, 444-448.

[9] Li Yuejing, Tong Yuying, Yang Guofeng*, et al., Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission, Journal of Vacuum Science &Technology A, 2015, 33, 05E102.

[10] Yang Guofeng*, Chen Peng, Liu Bin, et al., Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells, Physica E, 2014,62, 55-58.

[11] Yang Guofeng*, Li Guohua, Gao Shumei, et al., Characteristics of N-face InGaN light-emitting diodes with p-type InGaN/GaN superlattice, IEEE Photonics Technology Letter, 2013, 25, 2369-2372.

[12] Yang Guofeng*, Guo Ying, Zhu Huaxin, et al., Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks, Applied Surface Science, 2013,285, 772-777.

【Postgraduate Students】

6

【Contact Information】

School of Science, Jiangnan University，No.1800 Lihu Avenue, Wuxi, Jiangsu, 214122, China

【Update Date】

Last updated in March, 2018.